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Van der Waals heterostructures employing graphene and hexagonal boron nitride (hBN) crystals have emerged as a promising platform for plasmonics thanks to the tunability of their collective modes with carrier density and record values for plasmonics figures of merit. In this Article we investigate theoretically the role of moire-pattern superlattices in nearly aligned graphene on hBN by using continuum-model Hamiltonians derived from ab initio calculations. We calculate the systems energy loss function for a variety of chemical potential values that are accessible in gated devices. Our calculations reveal that the electron-hole asymmetry of the moire bands leads to a remarkable asymmetry of the plasmon dispersion between positive and negative chemical potentials, showcasing the intricate band structure and rich absorption spectrum across the secondary Dirac point gap for the hole bands.
Moire superlattices (MSL) formed in angle-aligned bilayers of van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potenti
Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pa
Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show tha
When hexagonal boron nitride (hBN) and graphene are aligned at zero or small twist angle, a moire structure is formed due to the small lattice constant mismatch between the two structures. In this work, we analyze magnetic ordering tendencies, driven
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrat