ﻻ يوجد ملخص باللغة العربية
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide large field-like torque rather than damping-like torque is favored for the switching.
We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experi
Weyl semimetals in a magnetic field give rise to interesting non-local electronic orbits: the ballistic transport through the bulk enabled by the chiral Landau levels is combined with a momentum-space sliding along the surface Fermi-arc driven by the
We present a new model of plasma-condensate system, by taking into account an anisotropy of transference reactions of adatoms between neighbor layers of multi-layer system, caused by the strength of the electric field near substrate. We discuss an in
The processional switching mechanism governs magnetic switching in magnetic tunnel junctions (MTJs) in the sub-nanosecond range, which limits the application of spin transfer torque magnetic random access memory (STT-MRAM) in the ultrafast region. In
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential