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Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO2 nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analysis, we observe partial adhesion and wrinkle features and find that smaller nanospheres induce larger tensile strain in graphene, theoretically, molecular dynamics simulations confirm the same microscopic structure and size dependence of strain and reveal that a larger strain is caused by a stronger, inhomogeneous interaction force between smaller nanospheres and graphene. This molecular-level understanding of the strain mechanism is important for strain engineering of graphene and other two-dimensional materials.
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel
Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN)
The modulation of the transmitted (reflected) radiation due to change of interband transitions under variation of carriers concentration by the gate voltage is studied theoretically. The calculations were performed for strongly doped graphene on high
We computationally study the effect of uniaxial strain in modulating the spontaneous emission of photons in silicon nanowires. Our main finding is that a one to two orders of magnitude change in spontaneous emission time occurs due to two distinct me
The strain engineering technique allows us to alter the electronic properties of graphene in various ways. Within the continuum approximation, the influences of strain result in the appearance of a pseudo-gauge field and modulated Fermi velocity. In