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A two-channel model for Spin-relaxation noise

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 نشر من قبل Siddhartha Omar
 تاريخ النشر 2017
  مجال البحث فيزياء
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We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.



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