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تسجيل مستخدم جديدAn Ultralow Leakage Synaptic Scaling Homeostatic Plasticity Circuit With Configurable Time Scales up to 100 ks
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Homeostatic plasticity is a stabilizing mechanism commonly observed in real neural systems that allows neurons to maintain their activity around a functional operating point. This phenomenon can be used in neuromorphic systems to compensate for slowly changing conditions or chronic shifts in the system configuration. However, to avoid interference with other adaptation or learning processes active in the neuromorphic system, it is important that the homeostatic plasticity mechanism operates on time scales that are much longer than conventional synaptic plasticity ones. In this paper we present an ultra-low leakage circuit, integrated into an automatic gain control scheme, that can implement the synaptic scaling homeostatic process over extremely long time scales. Synaptic scaling consists in globally scaling the synaptic weights of all synapses impinging onto a neuron maintaining their relative differences, to preserve the effects of learning. The scheme we propose controls the global gain of analog log-domain synapse circuits to keep the neurons average firing rate constant around a set operating point, over extremely long time scales. To validate the proposed scheme, we implemented the ultra-low leakage synaptic scaling homeostatic plasticity circuit in a standard 0.18 $mu$m Complementary Metal-Oxide Semiconductor (CMOS) process, and integrated it in an array of dynamic synapses connected to an adaptive integrate and fire neuron. The circuit occupies a silicon area of 84 $mu$m x 22 $mu$m and consumes approximately 10.8 nW with a 1.8 V supply voltage. We present experimental results from the homeostatic circuit and demonstrate how it can be configured to exhibit time scales of up to 100 kilo-seconds, thanks to a controllable leakage current that can be scaled down to 0.45 atto-Amperes (2.8 electrons/s).
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Homeostatic plasticity is a stabilizing mechanism that allows neural systems to maintain their activity around a functional operating point. This is an extremely useful mechanism for neuromorphic computing systems, as it can be used to compensate for
chronic shifts, for example due to changes in the network structure. However, it is important that this plasticity mechanism operates on time scales that are much longer than conventional synaptic plasticity ones, in order to not interfere with the learning process. In this paper we present a novel ultra-low leakage cell and an automatic gain control scheme that can adapt the gain of analog log-domain synapse circuits over extremely long time scales. To validate the proposed scheme, we implemented the ultra-low leakage cell in a standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) process, and integrated it in an array of dynamic synapses connected to an adaptive integrate and fire neuron. We describe the circuit and demonstrate how it can be configured to scale the gain of all synapses afferent to the silicon neuron in a way to keep the neurons average firing rate constant around a set operating point. The circuit occupies a silicon area of 84 {mu}m x 22 {mu}m and consumes approximately 10.8 nW with a 1.8 V supply voltage. It exhibits time constants of up to 25 kilo-seconds, thanks to a controllable leakage current that can be scaled down to 1.2 atto-Amps (7.5 electrons/s).
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