ﻻ يوجد ملخص باللغة العربية
As a strongly spin-orbit coupled metallic model with ferromagnetism, we have considered an extended Stoner model to the relativistic regime, named Dirac ferromagnet in three dimensions. In the previous paper~[Phys. Rev. B 90, 214418 (2014)], we studied the transport properties giving rise to the anisotropic magnetoresistance~(AMR) and the anomalous Hall effect~(AHE) with the impurity potential being taken into account only as the self-energy. The effects of the vertex corrections~(VCs) to AMR and AHE are reported in this paper. AMR is found not to change quantitatively when the VCs is considered, although the transport lifetime is different from the one-electron lifetime and the charge current includes additional contributions from the correlation with spin currents. The side-jump and the skew-scattering contributions to AHE are also calculated. The skew-scattering contribution is dominant in the clean case as can be seen in the spin Hall effect in the non-magnetic Dirac electron system.
Bismuth crystal is known for its remarkable properties resulting from particular electronic states, e. g., the Shubnikov-de Haas effect and the de Haas-van Alphen effect. Above all, the large diamagnetism of bismuth had been a long-standing puzzle so
The theoretical description of modern nanoelectronic devices requires a quantum mechanical treatment and often involves disorder, e.g. form alloys. Therefore, the ab initio theory of transport using non-equilibrium Greens functions is extended to the
We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity
Within a Kubo formalism, we study dc transport and ac optical properties of 3D Dirac and Weyl semimetals. Emphasis is placed on the approach to charge neutrality and on the differences between Dirac and Weyl materials. At charge neutrality, the zero-
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to a self co