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We report on the integration of large area CVD grown single- and bilayer graphene transparent conductive electrodes (TCEs) on amorphous silicon multispectral photodetectors. The broadband transmission of graphene results in 440% enhancement of the detectors spectral response in the ultraviolet (UV) region at {lambda} = 320 nm compared to reference devices with conventional aluminum doped zinc oxide (ZnO:Al) electrodes. The maximum responsivity of the multispectral photodetectors can be tuned in their wavelength from 320 nm to 510 nm by an external bias voltage, allowing single pixel detection of UV to visible light. Graphene electrodes further enable fully flexible diodes on polyimide substrates. Here, an upgrade from single to bilayer graphene boosts the maximum photoresponsivity from 134 mA $W^{-1}$ to 239 mA $W^{-1}$. Interference patterns that are present in conventional TCE devices are suppressed as a result of the atomically thin graphene electrodes. The proposed detectors may be of interest in fields of UV/VIS spectroscopy or for biomedical and life science applications, where the extension to the UV range can be essential.
Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the
We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external respo
We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephth
Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room temperature i
We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the