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A hard proximity-induced superconducting gap has recently been observed in semiconductor nanowire systems at low magnetic fields. However, in the topological regime at high magnetic fields, a soft gap emerges and represents a fundamental obstacle to topologically protected quantum information processing with Majorana bound states. Here we show that in a setup of double Rashba nanowires that are coupled to an s-wave superconductor and subjected to an external magnetic field along the wires, the topological threshold can be significantly reduced by the destructive interference of direct and crossed-Andreev pairing in this setup, precisely down to the magnetic field regime in which current experimental technology allows for a hard superconducting gap. We also show that the resulting Majorana bound states exhibit sufficiently short localization lengths, which makes them ideal candidates for future braiding experiments.
Recent experiments have produced mounting evidence of Majorana zero modes in nanowire-superconductor hybrids. Signatures of an expected topological phase transition accompanying the onset of these modes nevertheless remain elusive. We investigate a f
Developing a gate-tunable, scalable, and topologically-protectable supercurrent qubit and integrating it into a quantum circuit are crucial for applications in the fields of quantum information technology and topological phenomena. Here we propose th
We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced elec
We consider transport properties of a hybrid device composed by a quantum dot placed between normal and superconducting reservoirs, and coupled to a Majorana nanowire: a topological superconducting segment hosting Majorana zero-modes at the opposite
We report transport measurements and tunneling spectroscopy in hybrid nanowires with epitaxial layers of superconducting Al and the ferromagnetic insulator EuS, grown on semiconducting InAs nanowires. In devices where the Al and EuS covered facets ov