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Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque (SOT) switching. However, so far current-induced magnetic switching with TI has only been observed at cryogenic temperatures. It remains a controversial issue whether the topologically protected electronic states in TI could benefit spintronic applications at room temperature. In this work, we report full SOT switching in a TI/ferromagnet bilayer heterostructure with perpendicular magnetic anisotropy at room temperature. The low switching current density provides a definitive proof on the high SOT efficiency from TI. The effective spin Hall angle of TI is determined to be several times larger than commonly used heavy metals. Our results demonstrate the robustness of TI as an SOT switching material and provide a direct avenue towards applicable TI-based spintronic devices.
Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely reported in a
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics ove
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional spin-transfe