ترغب بنشر مسار تعليمي؟ اضغط هنا

Quantitative investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on YIG

77   0   0.0 ( 0 )
 نشر من قبل Masashi Shiraishi
 تاريخ النشر 2017
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The inverse Rashba-Edelstein effect (IREE) is a spin conversion mechanism that recently attracts attention in spintronics and condensed matter physics. In this letter, we report an investigation of the IREE in Bi/Ag by using ferrimagnetic insulator yttrium iron garnet (YIG). We prepared two types of samples with opposite directions of the Rashba field by changing a stacking order of Bi and Ag. An electric current generated by the IREE was observed from both stacks, and an efficiency of spin conversion -characterized by the IREE length- was estimated by taking into account a number of contributions left out in previous studies. This study provides a further insight into the IREE spin conversion mechanism: important step towards achieving efficient spin-charge conversion devices.



قيم البحث

اقرأ أيضاً

100 - Sz. Vajna , E. Simon , A. Szilva 2011
In order to explain the anisotropic Rashba-Bychkov effect observed in several metallic surface-state systems, we use k.p perturbation theory with a simple group-theoretical analysis and construct effective Rashba Hamiltonians for different point grou ps up to third order in the wavenumber. We perform relativistic ab initio calculations for the Bi/Ag(111) ordered surface alloy and from the calculated splitting of the band dispersion we find evidence of the predicted third-order terms. Furthermore, we derive expressions for the corresponding third-order Rashba parameters to provide a simple explanation to the qualitative difference concerning the Rashba-Bychkov splitting of the surface states at Au(111) and Bi/Ag(111).
We investigate from first principles the field-like spin-orbit torques (SOTs) in a Ag$_{2}$Bi-terminated Ag(111) film grown on ferromagnetic Fe(110). We find that a large part of the SOT arises from the spin-orbit interaction (SOI) in the Ag$_{2}$Bi layer far away from the Fe layers. These results clearly hint at a long range spin transfer in the direction perpendicular to the film that does not originate in the spin Hall effect. In order to bring evidence of the non-local character of the computed SOT, we show that the torque acting on the Fe layers can be engineered by the introduction of Bi vacancies in the Ag$_{2}$Bi layer. Overall, we find a drastic dependence of the SOT on the disorder type, which we explain by a complex interplay of different contributions to the SOT in the Brillouin zone.
It is well known that a current driven through a two-dimensional electron gas with Rashba spin-orbit coupling induces a spin polarization in the perpendicular direction (Edelstein effect). This phenomenon has been extensively studied in the linear re sponse regime, i.e., when the average drift velocity of the electrons is a small fraction of the Fermi velocity. Here we investigate the phenomenon in the nonlinear regime, meaning that the average drift velocity is comparable to, or exceeds the Fermi velocity. This regime is realized when the electric field is very large, or when electron-impurity scattering is very weak. The quantum kinetic equation for the density matrix of noninteracting electrons is exactly and analytically solvable, reducing to a problem of spin dynamics for unpaired electrons near the Fermi surface. The crucial parameter is $gamma=eEL_s/E_F$, where $E$ is the electric field, $e$ is the absolute value of the electron charge, $E_F$ is the Fermi energy, and $L_s = hbar/(2malpha)$ is the spin-precession length in the Rashba spin-orbit field with coupling strength $alpha$. If $gammall1$ the evolution of the spin is adiabatic, resulting in a spin polarization that grows monotonically in time and eventually saturates at the maximum value $n(alpha/v_F)$, where $n$ is the electron density and $v_F$ is the Fermi velocity. If $gamma gg 1$ the evolution of the spin becomes strongly non-adiabatic and the spin polarization is progressively reduced, and eventually suppressed for $gammato infty$. We also predict an inverse nonlinear Edelstein effect, in which an electric current is driven by a magnetic field that grows linearly in time. The conductivities for the direct and the inverse effect satisfy generalized Onsager reciprocity relations, which reduce to the standard ones in the linear response regime.
Nuclear spin polarization induced by hyperfine interaction and the Edelstein effect due to strong spin-orbit interaction is investigated by quantum transport in Bi(111) thin film samples. The Bi(111) films are deposited on mica by van der Waals epita xial growth. The Bi(111) films show micrometer-sized triangular islands with 0.39 nm step height, corresponding to the Bi(111) bilayer height. At low temperatures a high current density is applied to generate a non-equilibrium carrier spin polarization by the Edelstein effect at the Bi(111) surface, which then induces dynamic nuclear polarization by hyperfine interaction. Comparative quantum magnetotransport antilocalization measurements indicate a suppression of antilocalization by the in-plane Overhauser field from the nuclear polarization and allow a quantification of the Overhauser field. Hence nuclear polarization was both achieved and quantified by a purely electronic transport-based approach.
157 - M. Ye , S. V. Eremeev , K. Kuroda 2011
We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms depo sited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Waals gaps and the detachment of topmost QLs from the bulk crystal. This leads to a relocation (in the real space) of the the topological state beneath the detached quintuple layers, accompanied by the emergence of parabolic and M-shaped trivial bands localized above the relocated topological states. These novel findings open a pathway to the engineering of Dirac fermions shielded from the ambient contamination and may facilitate the realization of fault-tolerant quantum devices.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا