اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدAnomalous Hall Effect in ZrTe5
353
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
ZrTe$_5$ has been of recent interest as a potential Dirac/Weyl semimetal material. Here, we report the results of experiments performed via in-situ 3D double-axis rotation to extract the full $4pi$ solid angular dependence of the transport properties. A clear anomalous Hall effect (AHE) was detected for every sample, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Interestingly, the AHE takes large values when the magnetic field is rotated in-plane, with the values vanishing above $sim 60$ K where the negative longitudinal magnetoresistance (LMR) also disappears. This suggests a close relation in their origins, which we attribute to Berry curvature generated by the Weyl nodes.
قيم البحث
اقرأ أيضاً
The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a s
mooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the observation of an abrupt switching of the Hall effect by field rotation in a non-magnetic material, ZrTe5. The angular dependence of the Hall resistivity approaches a signum function, persisting down to an extremely low field of 0.03 T. By varying the carrier density of ZrTe5 over three orders of magnitude, we show that this singular behavior is due to the anomalous Hall effect generated by the ultra-dilute massive Dirac carriers in the quantum limit of Pauli paramagnetism when the Zeeman energy exceeds the Fermi energy. Our results elucidate the origin of the anomalous Hall effect in ZrTe5, arising owing to the spin-polarized massive Dirac electrons rather than the separation of Weyl nodes.
We predict an anomalous thermal Hall effect (ATHE) mediated by photons in networks of Weyl semi-metals. Contrary to the photon thermal Hall effect in magneto-optical systems which requires the application of an external magnetic field the ATHE in a W
eyl semi-metals network is an intrinsic property of these systems. Since the Weyl semi-metals can exhibit a strong nonreciprocal response in the infrared over a broad spectral range the magnitude of thermal Hall flux in these systems can be relatively large compared to the primary flux. This ATHE paves the way for a directional control of heat flux by localy tuning the magnitude of temperature field without changing the direction of temperature gradient.
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The qua
ntum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics.
Many striking non-equilibrium phenomena have been discovered or predicted in optically-driven quantum solids, ranging from light-induced superconductivity to Floquet-engineered topological phases. These effects are expected to lead to dramatic change
s in electrical transport, but can only be comprehensively characterized or functionalized with a direct interface to electrical devices that operate at ultrafast speeds. Here, we make use of laser-triggered photoconductive switches to measure the ultrafast transport properties of monolayer graphene, driven by a mid-infrared femtosecond pulse of circularly polarized light. The goal of this experiment is to probe the transport signatures of a predicted light-induced topological band structure in graphene, similar to the one originally proposed by Haldane. We report the observation of an anomalous Hall effect in the absence of an applied magnetic field. We also extract quantitative properties of the non-equilibrium state. The dependence of the effect on a gate potential used to tune the Fermi level reveals multiple features that reflect the effective band structure expected from Floquet theory. This includes a ~60 meV wide conductance plateau centered at the Dirac point, where a gap of approximately equal magnitude is expected to open. We also find that when the Fermi level lies within this plateau, the estimated anomalous Hall conductance saturates around ~1.8$pm$0.4 e$^2$/h.
Researches on anomalous Hall effect (AHE) have been lasting for a century to make clear the underlying physical mechanism. Generally, the AHE appears in magnetic materials, in which extrinsic process related to scattering effects and intrinsic contri
bution connected with Berry curvature are crucial. Recently, AHE has been counterintuitively observed in non-magnetic topological materials and attributed to the existence of Weyl points. However, the Weyl point scenario would lead to unsaturated AHE even in large magnetic fields and contradicts the saturation of AHE in several tesla (T) in experiments. In this work, we investigate the Hall effect of ZrTe5 and HfTe5 thin flakes in static ultrahigh magnetic fields up to 33 T. We find the AHE saturates to 55 (70) Ohm^-1*cm^-1 for ZrTe5 (HfTe5) thin flakes above ~ 10 T. Combining detailed magnetotransport experiments and Berry curvature calculations, we clarify that the splitting of massive Dirac bands without Weyl points can be responsible for AHE in non-magnetic topological materials ZrTe5 and HfTe5 thin flakes. This model can identify our thin flake samples to be weak topological insulators and serve as a new tool to probe the band structure topology in topological materials.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
