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The Fano factor stability diagram of a C$_{3v}$ symmetric triangular quantum dot is analysed for increasing electron fillings $N$. At low filling, conventional Poissonian and sub-Poissonian behavior is found. At larger filling, $Nge 2$, a breaking of the electron-hole symmetry is manifested in super-Poissonian noise with a peculiar bias voltage dependence of the Fano factor at Coulomb and interference blockade. An analysis of the Fano map unravels a nontrivial electron bunching mechanism arising from the presence of degenerate many-body states combined with orbital interference and Coulomb interactions. An expression for the associated dark states is provided for generic $N$.
Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupl
We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional natu
We present the full three dimensionality of an electrostatically calculated stability diagram for triple quantum dots. The stability diagram maps out the favored charge configuration of the system as a function of potential shifts due to gate voltage
In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is im
We present studies of thermal entanglement of a three-spin system in triangular symmetry. Spin correlations are described within an effective Heisenberg Hamiltonian, derived from the Hubbard Hamiltonian, with super-exchange couplings modulated by an