ﻻ يوجد ملخص باللغة العربية
It is demonstrated that the reason of SERS on dielectric and semiconductor substrates is the enhancement of the electric field in the regions of the tops of the surface roughness with very small radius, or a very large curvature. The enhancement depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. It is indicated that the enhancement on dielectrics and semiconductors is weaker than on metals with the same modulus of the dielectric constant. The result obtained is confirmed by experimental data on the enhancement coefficients obtained for various semiconductor and dielectric substrates.
The SEHRS and SERS spactra of 4,4 - Bipyridine are analyzed on the base of the Dipole-Quadrupole theory for two possible geometries of the molecule. It is demonstrated that there appear strong lines caused by vibrations transforming after a unit irre
The SERS spectra of the phthalocianine molecule, adsorbed on the gallium phosphide substrate are investigated. It is demonstrated that there appear strong lines, which are forbidden in usual Raman scattering. Analysis of the spectra indicates that th
We present an in-depth analysis of the experimental estimation of cross sections in Surface Enhanced Raman Scattering (SERS) by vibrational pumping. The paper highlights the advantages and disadvantages of the technique, pinpoints the main aspects an
The SERS spectrum of hydroquinone, adsorbed on nanoparticles of titanium dioxide is analyzed. It is pointed out that the enhancement is stronger for larger mean size of nanoparticles that is in an agreement with the electrostatic approximation. In ad
We present a critical overview comparing theoretical predictions and measurements of Van der Waals dispersion forces in media on the basis of the respective Hamaker constants. To quantify the agreement, we complement the reported experimental errors