اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMagneto-excitons in large area CVD grown monolayer MoS$_{2}$ and MoSe$_{2}$ on sapphire
509
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^circ$C). However, the estimated strain, which is maximum at low temperature, is only $simeq 0.2%$. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of valley g-factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS$_2$.
قيم البحث
اقرأ أيضاً
We study photoluminescence (PL) spectra and exciton dynamics of MoS$_2$ monolayer (ML) grown by the chemical vapor deposition technique. In addition to the usual direct A-exciton line we observe a low-energy line of bound excitons dominating the PL s
pectra at low temperatures. This line shows unusually strong redshift with increase in the temperature and submicrosecond time dynamics suggesting indirect nature of the corresponding transition. By monitoring temporal dynamics of exciton PL distribution in the ML plane we observe diffusive transport of A-excitons and measure the diffusion coefficient up to $40$~cm$^2$/s at elevated excitation powers. The bound exciton spatial distribution spreads over tens of microns in $sim 1$ $mu$s. However this spread is subdiffusive, characterized by a significant slowing down with time. The experimental findings are interpreted as a result of the interplay between the diffusion and Auger recombination of excitons.
We present experimental and theoretical results on the high-quality single-layer MoS$_{2}$ which reveal the fine structure of charged excitons, i.e., trions. In the emission spectra we resolve and identify two trion peaks, T$_{1}$ and T$_{2}$, resemb
ling the pair of singlet and triplet trion peaks (T$_S$ and T$_{T}$) in tungsten-based materials. However, in polarization-dependent photoluminescence measurements we identify these peaks as novel intra- and inter-valley singlet trions, constituting the trion fine structure distinct from that already known in bright and dark 2D materials with large conduction-band splitting induced by the spin-orbit coupling. We show that the trion energy splitting in MoS$_{2}$ is a sensitive probe of inter- and intra-valley carrier interaction. With additional support from theory we claim that the existence of these singlet trions combined with an anomalous excitonic g-factor and the characteristic temperature dependence of the emission spectra together suggest that monolayer MoS$_{2}$ has a dark excitonic ground state, despite having bright single-particle arrangement of spin-polarized conduction bands.
The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest emissions obs
erved in monolayers exfoliated from bulk material. The 2s excitonic state is also observed at higher energies in the photoluminescence spectrum. Magneto-optical spectroscopy allows for the determination of the g-factors and of the spatial extent of the excitonic wave functions associated with these emissions. Our work establishes CVD grown monolayers of transition metal dichalcogenides as a mature technology for optoelectronic applications.
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${text{MoS}_{2}-text{MoSe}_{2}}$ to study optical pumping of
spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, $sim 30,{text{ns}}^{-1}$ and $< 1,{text{ns}}^{-1}$, respectively and show that this difference relates to the disparity in the spin-orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of free carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices.
The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However, in presenc
e of Landaul level(LL) quantization such selection rules are taken over by selection rules between the LLs, which are not necessarily valley contrasting. Using MoS$_{2}$ as an example we show that the spatial inversion-symmetry breaking results in unusual valley dependent inter-LL selection rules, which directly locks polarization to valley. We find a systematic valley splitting for all Landau levels (LLs) in the quantum Hall regime, whose magnitude is linearly proportional to the magnetic field and in comparable with the LL spacing. Consequently, unique plateau structures are found in the optical Hall conductivity, which can be measured by the magneto-optical Faraday rotations.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
