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Electric-field control of magnetization promises to substantially enhance the energy efficiency of device applications ranging from data storage to solid-state cooling. However, the intrinsic linear magnetoelectric effect is typically small in bulk materials. In thin films electric-field tuning of spin-orbit interaction phenomena (e.g., magnetocrystalline anisotropy) has been reported to achieve a partial control of the magnetic state. Here we explore the piezomagnetic effect (PME), driven by frustrated exchange interactions, which can induce a net magnetization in an antiferromagnet and reverse its direction via elastic strain generated piezoelectrically. Our $ab~initio$ study of PME in Mn-antiperovskite nitrides identified an extraordinarily large PME in Mn$_3$SnN available at room temperature. We explain the magnitude of PME based on features of the electronic structure and show an inverse-proportionality between the simulated zero-temperature PME and the negative thermal expansion at the magnetic (Neel) transition measured by Takenaka et al. in 9 antiferromagnetic Mn$_3$AN systems.
The anomalous Nernst effect (ANE) - the generation of a transverse electric voltage by a longitudinal heat current in conducting ferromagnets or antiferromagnets - is an appealing approach for thermoelectric power generation in spin caloritronics. Th
We model changes of magnetic ordering in Mn-antiperovskite nitrides driven by biaxial lattice strain at zero and at finite temperature. We employ a non-collinear spin-polarised density functional theory to compare the response of the geometrically fr
ABX3 perovskites have attracted intensive research interest in recent years due to their versatile composition and superior optoelectronic properties. Their counterparts, antiperovskites (X3BA), can be viewed as electronically inverted perovskite der
The thermal expansion at constant pressure of solid CD$_4$ III is calculated for the low temperature region where only the rotational tunneling modes are essential and the effect of phonons and librons can be neglected. It is found that in mK region
The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90