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Our knowledge of the ground state of underdoped hole-doped cuprates has evolved considerably over the last few years. There is now compelling evidence that inside the pseudogap phase, charge order breaks translational symmetry leading to a reconstructed Fermi surface made of small pockets. Quantum oscillations, [Doiron-Leyraud N, et al. (2007) Nature 447:564-568], optical conductivity [Mirzaei SI, et al. (2013) Proc Natl Acad Sci USA 110:5774-5778] and the validity of Wiedemann-Franz law [Grissonnache G, et al. (2016) Phys. Rev. B 93:064513] point to a Fermi liquid regime at low temperature in the underdoped regime. However, the observation of a quadratic temperature dependence in the electrical resistivity at low temperatures, the hallmark of a Fermi liquid regime, is still missing. Here, we report magnetoresistance measurements in the magnetic-field-induced normal state of underdoped YBa_2Cu_4O_8 which are consistent with a T^2 resistivity extending down to 1.5 K. The magnitude of the T^2 coefficient, however, is much smaller than expected for a single pocket of the mass and size observed in quantum oscillations, implying that the reconstructed Fermi surface must consist of at least one additional pocket.
Reconstruction of the Fermi surface of high-temperature superconducting cuprates in the pseudogap state is analyzed within nearly exactly solvable model of the pseudogap state, induced by short-range order fluctuations of antiferromagnetic (AFM, spin
Cuprate high-T_c superconductors on the Mott-insulating side of optimal doping (with respect to the highest T_cs) exhibit enigmatic behavior in the non-superconducting state. Near optimal doping the transport and spectroscopic properties are unlike t
The characteristic pseudogap temperature T* in Bi2Sr2CaCu2O8 system has been systematically evaluated as a function of doping, especially focusing on its overdoped region, by measuring the out-of-plane resistivity under the magnetic fields. Overdoped
A fundamental question of high-temperature superconductors is the nature of the pseudogap phase which lies between the Mott insulator at zero doping and the Fermi liquid at high doping p. Here we report on the behaviour of charge carriers near the ze
We present low temperature tunneling density-of-states measurements in Al films in high parallel magnetic fields. The thickness range of the films, t=6-9 nm, was chosen so that the orbital and Zeeman contributions to their parallel critical fields we