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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $mu$m, produced at CiS, and 100-200 $mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-ou
A new generation of 3D silicon pixel detectors with a small pixel size of 50$times$50 and 25$times$100 $mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiatio
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studie
Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100