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The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${it E}_{rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near ${it E}_{rm F}$ shows a square-like distribution around the $Gamma$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO$_{0.54}$F$_{0.46}$BiS$_2$ is in close proximity to the theoretically-predicted topological change.
We study bulk electronic states of superconducting topological insulator, which is the promising candidate for topological superconductor. Recent experiments suggest that the three-dimensional Fermi surface evolves into two-dimensional one. We show t
The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum co
High resolution laser-based angle-resolved photoemission measurements were carried out on an overdoped $Bi_2Sr_2CaCu_2O_{8+delta}$ superconductor with a Tc of 75 K. Two Fermi surface sheets caused by bilayer splitting are clearly identified with rath
At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an $s$-wave SC in
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.