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In three-dimensional topological insulators (3D TI) nanowires, transport occurs via gapless surface states where the spin is fixed perpendicular to the momentum[1-6]. Carriers encircling the surface thus acquire a pi Berry phase, which is predicted to open up a gap in the lowest-energy 1D surface subband. Inserting a magnetic flux ({Phi}) of h/2e through the nanowire should cancel the Berry phase and restore the gapless 1D mode[7-8]. However, this signature has been missing in transport experiments reported to date[9-11]. Here, we report measurements of mechanically-exfoliated 3D TI nanowires which exhibit Aharonov-Bohm oscillations consistent with topological surface transport. The use of low-doped, quasi-ballistic devices allows us to observe a minimum conductance at {Phi} = 0 and a maximum conductance reaching e^2/h at {Phi} = h/2e near the lowest subband (i.e. the Dirac point), as well as the carrier density dependence of the transport.
A direct signature of electron transport at the metallic surface of a topological insulator is the Aharonov-Bohm oscillation observed in a recent study of Bi_2Se_3 nanowires [Peng et al., Nature Mater. 9, 225 (2010)] where conductance was found to os
New experiments are presented on the transmission of electron waves through a 2DEG (2 dimensional electron gas) ring with a gate on top of one of the branches. Magnetoconductance oscillations are observed, and the phase of the Aharanov-Bohm signal al
We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is ob
Topological insulators have an insulating bulk but a metallic surface. In the simplest case, the surface electronic structure of a 3D topological insulator is described by a single 2D Dirac cone. A single 2D Dirac fermion cannot be realized in an iso
With an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs-heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with mo