ترغب بنشر مسار تعليمي؟ اضغط هنا

Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te

160   0   0.0 ( 0 )
 نشر من قبل Kilanski Lukasz Dr.
 تاريخ النشر 2014
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals with chemical compositions 0.041 < x < 0.092 and 0.010 < y < 0.043 are studied. Ferromagnetic order is observed at 150 < T < 160 K. Aggregation of magnetic ions into clusters is found to be the source of almost constant, composition independent Curie temperatures in our samples. Magnetotransport studies show the presence of both negative (at T < 25 K) and linear positive (for 25<T <200 K) magnetoresistance effects (with amplitudes not exceeding 2%) in the studied alloy. Negative magnetoresistance detected at T < 25 K is found to be due to a tunneling of spin-polarized electrons between ferromagnetic clusters. A linear positive magnetoresistance is identified to be geometrical effect related with the presence of ferromagnetic clusters inside semiconductor matrix. The product of the polarization constant and the inter-grain exchange constant, J_P, varies between about 0.13 meV and 0.99 meV. Strong anomalous Hall effect (AHE) is observed for T < T_C with coefficients R_S independent of temperature. The scaling analysis of the AHE leads to a conclusion that this effect is due to a skew scattering mechanism.

قيم البحث

اقرأ أيضاً

We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the Ge/1-x-y/Cr/x/Eu/y/Te samples with chemical composition varying in the range of 0.015 < x < 0.057 and 0.003 < y < 0.042. The ferromagnetic tra nsition at temperatures 50 < T < 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic interactions seem to be responsible for the observed ferromagnetic order. The magnetic irreversibility with coercive field H/C/ = 5?63 mT and the saturation magnetization M/S/ <? 2?6 emu/g are found to strongly depend on the chemical composition of the alloy.
Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures $T_{rm c}$ of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum $T_{rm c} approx 180$ K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-$T_{rm c}$ phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change- memory functionality.
We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 leq x leq 0.061. A spin-glass state (at T leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60 K) for x geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic ordering for x < 0.045, while for x geq 0.045 the spinodal decomposition of Cr ions leads to a maximum and decrease of the Curie temperature, TC, with increasing x. The calculations based on spin waves model are able to reproduce the observed magnetic properties at a homogeneous limit of Cr alloying, e.g. x < 0.04, and prove that carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is responsible for the observed magnetic states. The value of the Cr-hole exchange integral, Jpd, estimated via fitting of the experimental results with the theoretical model, is in the limits 0.77...0.88 eV.
The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature TSG = 97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p = 6.6E20 cm-3, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect (AHE) with hysteresis loops. Calculated AHE coefficient, RS = 2.0E6 m3/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for AHE in Ge(0.743)Pb(0.183)Mn(0.074)Te alloy.
The composition-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI), the spin-orbit torque (SOT), as well as anomalous and spin Hall conductivities of Mn$_{1-x}$Fe$_x$Ge alloys have been investigated by first-principles calculations usi ng the relativistic multiple scattering Korringa-Kohn-Rostoker (KKR) formalism. The $D_{rm xx}$ component of the DMI exhibits a strong dependence on the Fe concentration, changing sign at $x approx 0.85$ in line with previous theoretical calculations as well as with experimental results demonstrating the change of spin helicity at $x approx 0.8$. A corresponding behavior with a sign change at $x approx 0.5$ is predicted also for the Fermi sea contribution to the SOT, as this is closely related to the DMI. In the case of anomalous and spin Hall effects it is shown that the calculated Fermi sea contributions are rather small and the composition-dependent behavior of these effects are determined mainly by the electronic states at the Fermi level. The spin-orbit-induced scattering mechanisms responsible for both these effects suggest a common origin of the minimum of the AHE and the sign change of the SHE conductivities.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا