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We report on two pulse, degenerate four wave mixing (DFWM) measurements on shallow InGaN/GaN multi-quantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement of the DFWM signal at the excitonic transition frequencies which thereby give a sharp discrimination of the discrete excitonic contributions within the featureless distribution seen in absorption spectra. The exciton resonances have peak positions, which yield good overall agreement with a full k.P model calculation for the quantum well energy levels and optical transition matrix elements. InGaN/GaN MQWs generally exhibit strongly inhomogeneously broadened excitation spectra due to indium fluctuation effects; this approach therefore affords a practical method to extract information on the excited excitonic states not available previously
The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, m
We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30,ns, they follow an exponential form, and a power law at times longer than 1,$mu$s.
Based on a microscopic many-particle theory, we predict large optical gain in the probe and background-free four-wave mixing directions caused by excitonic instabilities in semiconductor quantum wells. For a single quantum well with radiative-decay l
Single photon-level quantum frequency conversion has recently been demonstrated using silicon nitride microring resonators. The resonance enhancement offered by such systems enables high-efficiency translation of quantum states of light across wide f
We suggest a scheme to manipulate paraxial diffraction by utilizing the dependency of a four-wave mixing process on the relative angle between the light fields. A microscopic model for four-wave mixing in a Lambda-type level structure is introduced a