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Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or scotch-tape method) from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM) and Raman Spectroscopy. Electrical terminals are deposited on MLGs in a four-probe configuration by electron-beam lithography, gold/titanium thermal evaporation, and lift-off. The electrical resistance is measured from room temperature down to 2 K. The electrical resistance of the MLGs shows an increase with decreasing temperature, and then decreases after reaching a maximum value. These results are compared with recent experimental and theoretical data from the literature.
We apply the semi-classical quantum Boltzmann formalism for the computation of transport properties to multilayer graphene. We compute the electrical conductivity as well as the thermal conductivity and thermopower for Bernal-stacked multilayers with
Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier density. We find that the temperature dep
Resistivity and specific heat measurements were performed in the low carrier unconventional superconductor URu2Si2 on various samples with very different qualities. The superconducting transition temperature (TSC) and the hidden order transition temp
The finite-temperature transport properties of FeRh compounds are investigated by first-principles Density Functional Theory-based calculations. The focus is on the behavior of the longitudinal resistivity with rising temperature, which exhibits an a
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment an