اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدBidirectional photon extraction from an epitaxially grown semiconductor quantum dot sandwiched by single mode optical fibers
88
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs quantum dots (QDs) are fixed mechanically by both side with the edge faces of the single-mode-fiber (SMF) patch cables. The emitting photons from the single quantum dot are directly taken out of both side through the SMFs. Single-photon emission between two SMF outputs is confirmed by detecting non-classical antibunching in second-order photon correlation measurements with two superconducting single-photon detectors (SSPDs) and a time-amplitude converter (TAC). This simple opto-mechanical alignment-free single-photon emitter has advantage of robust stability more than 10 days and low-cost fabrication.
قيم البحث
اقرأ أيضاً
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time cha
llenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes highest detection efficiency.
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The elect
rostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a five-fold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies.
User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical f
ibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quantum dot microlens with a 3D-printed micro-objective in combination with a single-mode on-chip fiber coupler. The practical quantum device is realized by deterministic fabrication of the QD-microlens via in-situ electron-beam lithography and 3D two-photon laser writing of the on-chip micro-objective and fiber-holder. The QD with microlens is an efficient single-photon source, whose emission is collimated by the on-chip micro-objective. A second polymer microlens is located at the end facet of the single-mode fiber and ensures that the collimated light is efficiently coupled into the fiber core. For this purpose, the fiber is placed in the on-chip fiber chuck, which is precisely aligned to the QD-microlens thanks to the sub-$mu$m processing accuracy of high-resolution two-photon direct laser writing. This way, we obtain a fully integrated high-quality quantum device with broadband photon extraction efficiency, a single-mode fiber-coupling efficiency of 26%, a single-photon flux of 1.5 MHz at single-mode fibre output and a multi-photon probability of 13 % under pulsed optical excitation. In addition, the stable design of the developed fiber-coupled quantum device makes it highly attractive for integration into user-friendly plug-and-play quantum applications.
The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-laye
r MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 {mu}m2 and 60 {mu}m2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large area CVD grown samples.
Using background-free detection of spin-state-dependent resonance fluorescence from a single-electron charged quantum dot with an efficiency of 0:1%, we realize a single spin-photon interface where the detection of a scattered photon with 300 picosec
ond time resolution projects the quantum dot spin to a definite spin eigenstate with fidelity exceeding 99%. The bunching of resonantly scattered photons reveals information about electron spin dynamics. High-fidelity fast spin-state initialization heralded by a single photon enables the realization of quantum information processing tasks such as non-deterministic distant spin entanglement. Given that we could suppress the measurement back-action to well below the natural spin-flip rate, realization of a quantum non-demolition measurement of a single spin could be achieved by increasing the fluorescence collection efficiency by a factor exceeding 20 using a photonic nanostructure.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
