ترغب بنشر مسار تعليمي؟ اضغط هنا

Spin-Polarized Ground States and Ferromagnetic Order Induced by Low-Coordinated Surface Atoms and Defects in Nanoscale Magnesium Oxide

93   0   0.0 ( 0 )
 نشر من قبل Takashi Uchino
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We investigate the effect of low-coordinated surface atoms on the defect-induced magnetism in MgO nanocrystallites using hybrid density functional theory calculations. It has been demonstrated that when Mg vacancies are introduced at the corners of cube-like MgO clusters, a magnetic state becomes lower in total energy than the nonmagnetic singlet state by 1-2 eV, resulting in the spin-polarized ground state. The spin density is not only located at the surrounding O atoms neighbor to the corner Mg vacancy site but is also extended to the distant (1 nm or longer) low-coordinated surface O atoms along the <110> directions. This directional spin delocalization allows a remote Mg vacancy-Mg vacancyinteraction, eventually leading to a spontaneous long-range ferromagnetic interaction.



قيم البحث

اقرأ أيضاً

136 - Y. Li , M. Amado , T. Hyart 2019
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. H ere, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results show that a magnetic proximity effect in graphene is an important ingredient for the development of two-dimensional materials in which it is desirable for ordered states of matter to be tunable with relatively small applied magnetic fields (> 6 T).
110 - Chang Liu , Yunbo Ou , Yang Feng 2021
The quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) represents a new state of matter originated from the interplay between topology and magnetism. The defining characteristics of the QAH ground state are the quantized Hall resistivity ($rho_{yx}$) and vanishing longitudinal resistivity ($rho_{xx}$) in the absence of external magnetic field. A fundamental question concerning the QAH effect is whether it is merely a zero-magnetic-field quantum Hall (QH) effect, or if it can host unique quantum phases and phase transitions that are unavailable elsewhere. The most dramatic departure of the QAH systems from other QH systems lies in the strong magnetic disorders that induce spatially random magnetization. Because disorder and magnetism play pivotal roles in the phase diagram of two-dimensional electron systems, the high degree of magnetic disorders in QAH systems may create novel phases and quantum critical phenomena. In this work, we perform systematic transport studies of a series of magnetic TIs with varied strength of magnetic disorders. We find that the ground state of QAH effect can be categorized into two distinct classes: the QAH insulator and anomalous Hall (AH) insulator phases, as the zero-magnetic-field counterparts of the QH liquid and Hall insulator in the QH systems. In the low disorder limit of the QAH insulator regime, we observe a universal quantized longitudinal resistance $rho_{xx} = h/e^{2}$ at the coercive field. In the AH insulator regime, we find that a magnetic field can drive it to the QAH insulator phase through a quantum critical point with distinct scaling behaviors from that in the QH phase transition. We propose that the transmission between chiral edge states at domain boundaries, tunable by disorder and magnetic fields, is the key for determining the QAH ground state.
Voltage induced magnetization dynamics of magnetic thin films is a valuable tool to study anisotropic fields, exchange couplings, magnetization damping and spin pumping mechanism. A particularly well established technique is the ferromagnetic resonan ce (FMR) generated by the coupling of microwave photons and magnetization eigenmodes in the GHz range. Here we review the basic concepts of the so-called acoustic ferromagnetic resonance technique (a-FMR) induced by the coupling of surface acoustic waves (SAW) and magnetization of thin films. Interestingly, additional to the benefits of the microwave excited FMR technique, the coupling between SAW and magnetization also offers fertile ground to study magnon-phonon and spin rotation couplings. We describe the in-plane magnetic field angle dependence of the a-FMR by measuring the absorption / transmission of SAW and the attenuation of SAW in the presence of rotational motion of the lattice, and show the consequent generation of spin current by acoustic spin pumping.
The polar interface between LaAlO$_{3}$ and SrTiO$_{3}$ has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the mobility of the i nterfacial two-dimensional electron gas (2DEG) is lower than desirable. Therefore to progress, the highly debated origin of the 2DEG must be understood. Here we present a case for surface redox reactions as the origin of the 2DEG, in particular surface O vacancies, using a model supported by first principles calculations that describes the redox formation. In agreement with recent spectroscopic and transport measurements, we predict a stabilization of such redox processes (and hence Ti 3$d$ occupation) with film thickness beyond a critical value, which can be smaller than the critical thickness for 2D electronic conduction, since the surface defects generate trapping potentials that will affect the interface electron mobility. Several other recent experimental results, such as lack of core level broadening and shifts, find natural explanation. Pristine systems will likely require changed growth conditions or modified materials with a higher vacancy free energy.
We perform {textit ab initio} calculations for the strain-induced formation of non-hexagonal-ring defects in graphene, graphane (planar CH), and graphenol (planar COH). We find that the simplest of such topological defects, the Stone-Wales defect, ac ts as a seed for strain-induced dissociation and multiplication of topological defects. Through the application of inhomogeneous deformations to graphene, graphane and graphenol with initially small concentrations of pentagonal and heptagonal rings, we obtain several novel stable structures that possess, at the same time, large concentrations of non-hexagonal rings (from fourfold to elevenfold) and small formation energies.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا