اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNote on lattice spin in graphene and spin from isospin phenomenon
47
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
It is well-known that the dynamics of low energy electron in graphene honeycomb lattice near the K/K points can be described, in tight-binding approximation, by 2+1 massless Dirac equation. Graphenes spin equivalent, pseudospin, arises from the degeneracy introduced by the honeycomb lattices two inequivalent atomic sites per unit cell. Mecklenburg and Regan (Phys. Rev. Lett. 106 (2011), 116803) have shown that, contrary to the common view, the pseudospin has all attributes of real angular momentum. In some circumstances, the internal symmetries can produce an important contribution to angular momentum. This phenomenon has been known for many years in particle physics and called spin from isospin. We show that similar mechanism works in the case of lattice pseudospin.
قيم البحث
اقرأ أيضاً
A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, s
how that graphenes spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sources of magnetic and non-magnetic decoherence in graphene. Magnetic defects are shown to be the primary cause of spin relaxation, while spin-orbit interaction is undetectably small.
Knowledge of the topology of the electronic ground state of materials has led to deep insights to novel phenomena such as the integer quantum Hall effect and fermion-number fractionalization, as well as other properties of matter. Joining two insulat
ors of different topological classes produces fascinating boundary states in the band gap. Another exciting recent development is the bottom-up synthesis (from molecular precursors) of graphene nanoribbons (GNRs) with atomic precision control of their edge and width. Here we connect these two fields, and show for the first time that semiconducting GNRs of different width, edge, and end termination belong to different topological classes. The topology of GNRs is protected by spatial symmetries and dictated by the terminating unit cell. We have derived explicit formula for their topological invariants, and show that localized junction states developed between two GNRs of distinct topology may be tuned by lateral junction geometry. The topology of a GNR can be further modified by dopants, such as a periodic array of boron atoms. In a superlattice consisted of segments of doped and pristine GNRs, the junction states are stable spin centers, forming a Heisenberg antiferromagnetic spin 1/2 chain with tunable exchange interaction. The discoveries here are not only of scientific interest for studies of quasi one-dimensional systems, but also open a new path for design principles of future GNR-based devices through their topological characters.
We find that quantum spin Hall (QSH) state can be obtained on a square-like or rectangular lattice, which is generalized from two-dimensional (2D) transition metal dichalcogenide (TMD) haeckelites. Band inversion is shown to be controled by hopping p
arameters and results in Dirac cones with opposite or same vorticity when spin-orbit coupling (SOC) is not considered. Effective k$cdot$p model has been constructed to show the merging or annihilation of these Dirac cones, supplemented with the intuitive pseudospin texture. Similar to graphene based honeycomb lattice system, the QSH insulator is driven by SOC, which opens band gap at the Dirac cones. We employ the center evolution of hybrid Wannier function from Wilson-loop method, as well as the direct integral of Berry curvature, to identify the $Z_2$ number. We hope our detailed analysis will stimulate further efforts in searching for QSH insulators in square or rectangular lattice, in addition to the graphene based honeycomb lattice.
Spin-orbit splitting in graphene on Ni, Au, or Ag (111) substrates was examined on the basis of density-functional theory. Graphene grown on the three metals was found to have Rashba splitting of a few or several tens of meV. The strong splitting obt
ained on Au or Ag substrates was mainly ascribed to effective hybridization of graphene $p_{z}$ state with Au or Ag $d_{z^{2}}$ states, rather than charge transfer as previously proposed. Our work provides theoretical understandings of the metal-induced Rashba effect in graphene.
The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, meas
ured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for nonmagnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, which makes it unique to graphene. The mixing between spin and pseudospin-related Berrys phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
