ترغب بنشر مسار تعليمي؟ اضغط هنا

Avoiding power broadening in optically detected magnetic resonance of single NV defects for enhanced DC-magnetic field sensitivity

277   0   0.0 ( 0 )
 نشر من قبل Jacques Vincent
 تاريخ النشر 2011
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report a systematic study of the magnetic field sensitivity of a magnetic sensor based on a single Nitrogen-Vacancy (NV) defect in diamond, by using continuous optically detected electron spin resonance (ESR) spectroscopy. We first investigate the behavior of the ESR contrast and linewidth as a function of the microwave and optical pumping power. The experimental results are in good agreement with a simplified model of the NV defect spin dynamics, yielding to an optimized sensitivity around 2 mu T/sqrt{rm Hz}. We then demonstrate an enhancement of the magnetic sensitivity by one order of magnitude by using a simple pulsed-ESR scheme. This technique is based on repetitive excitation of the NV defect with a resonant microwave pi-pulse followed by an optimized read-out laser pulse, allowing to fully eliminate power broadening of the ESR linewidth. The achieved sensitivity is similar to the one obtained by using Ramsey-type sequences, which is the optimal magnetic field sensitivity for the detection of DC magnetic fields.



قيم البحث

اقرأ أيضاً

Using pulsed optically detected magnetic resonance techniques, we directly probe electron-spin resonance transitions in the excited-state of single Nitrogen-Vacancy color centers in diamond. Unambiguous assignment of excited state fine structure is m ade, based on changes of NV defect photoluminescence lifetime. This study provides significant insight into the structure of the emitting 3E excited state, which is invaluable for the development of diamond-based quantum information processing.
Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as thei r reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.
Defect spins in silicon carbide have become promising platforms with respect to quantum information processing and quantum sensing. Indeed, the optically detected magnetic resonance (ODMR) of defect spins is the cornerstone of the applications. In th is work, we systematically investigate the contrast and linewidth of laser-and microwave power-dependent ODMR with respect to ensemble-divacancy spins in silicon carbide at room temperature. The results suggest that magnetic field sensing sensitivity can be improved by a factor of 10 for the optimized laser and microwave power range. The experiment will be useful for the applications of silicon carbide defects in quantum information processing and ODMR-dependent quantum sensing.
Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation o f excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film is to exploit the fluorescence arising from delayed recombination of carrier pairs, a process which is fundamentally spin dependent. Such spin-dependent recombination can be probed directly in fluorescence, by optically detected magnetic resonance (ODMR). Depending on the relative orientation, an electric field may either dissociate or stabilize an electron-hole carrier pair. We find that the ODMR signal in a polymer film is quenched in an electric field, but that, at fields exceeding 1 MV/cm, this quenching saturates. This finding contrasts the complete ODMR suppression that was previously observed in polymeric photodiodes, indicating that exciton-charge interactions---analogous to Auger recombination in crystalline semiconductors---may constitute the dominant carrier-pair dissociation process in organic electronics.
Magnetometry and magnetic imaging with nitrogen-vacancy (NV) defects in diamond rely on the optical detection of electron spin resonance (ESR). However, this technique is inherently limited to magnetic fields that are weak enough to avoid electron sp in mixing. Here we focus on the high off-axis magnetic field regime for which spin mixing alters the NV defect spin dynamics. We first study in a quantitative manner the dependence of the NV defect optical properties on the magnetic field vector B. Magnetic-field-dependent time-resolved photoluminescence (PL) measurements are compared to a seven-level model of the NV defect that accounts for field-induced spin mixing. The model reproduces the decreases in (i) ESR contrast, (ii) PL intensity and (iii) excited level lifetime with an increasing off-axis magnetic field. We next demonstrate that those effects can be used to perform all-optical magnetic imaging in the high off-axis magnetic field regime. Using a scanning NV defect microscope, we map the stray field of a magnetic hard disk through both PL and fluorescence lifetime imaging. This all-optical method for high magnetic field imaging at the nanoscale might be of interest in the field of nanomagnetism, where samples producing fields in excess of several tens of milliteslas are typical.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا