ﻻ يوجد ملخص باللغة العربية
The present paper describes the experimental implementation of a measuring technique employing a slowly moving, near resonant, optical standing wave in the context of trapped ions. It is used to measure several figures of merit that are important for quantum computation in ion traps and which are otherwise not easily obtainable. Our technique is shown to offer high precision, and also in many cases using a much simpler setup than what is normally used. We demonstrate here measurements of i) the distance between two crystalline ions, ii) the Lamb-Dicke parameter, iii) temperature of the ion crystal, and iv) the interferometric stability of a Raman setup. The exact distance between two ions, in units of standing wave periods, is very important for motional entangling gates, and our method offers a practical way of calibrating this distance in the typical lab situation.
The correlations of the decay products following the beta decay of nuclei have a long history of providing a low-energy probe of the fundamental symmetries of our universe. Over half a century ago, the correlation of the electrons following the decay
Ion traps offer the opportunity to study fundamental quantum systems with high level of accuracy highly decoupled from the environment. Individual atomic ions can be controlled and manipulated with electric fields, cooled to the ground state of motio
We report on single Barium ions confined in a near-infrared optical dipole trap for up to three seconds in absence of any radio-frequency fields. Additionally, the lifetime in a visible optical dipole trap is increased by two orders of magnitude as c
We propose and examine the use of biphoton pairs, such as those created in parametric down conversion or four-wave mixing, to enhance the precision and the resolution of measuring optical displacements by position-sensitive detection. We show that th
We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regio