ترغب بنشر مسار تعليمي؟ اضغط هنا

Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys

126   0   0.0 ( 0 )
 نشر من قبل Sergey Nikolaev
 تاريخ النشر 2010
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (paramagnons) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.



قيم البحث

اقرأ أيضاً

191 - D. S. Bouma , Z. Chen , B. Zhang 2019
The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of ma gnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $rho_{xy}^{mathrm{AH}}$ relative to crystalline FeGe; this $rho_{xy}^{mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 leq x leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.
143 - S. S. Acharya 2019
This paper reports high resolution X-ray photoelectron spectroscopy (XPS) studies on Fe$_{1-x}$Ni$_x$ (x=0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.9) alloys down to 10 K temperature. Core levels and Auger transitions of the alloys except the invar alloy (x=0.4 ) exhibit no observable temperature induced changes. The invar alloy exhibits changes in the core levels below 20 K temperature that strongly depend on the core level. Such core level dependent changes with temperature were attributed to the precipitation of spin glass like phase below 20 K only in the invar alloy. Ni L$_3$M$_{45}$M$_{45}$ Auger transition also supported such precipitation below 20 K.
Temperature gradient in a ferromagnetic conductor may generate a spontaneous transverse voltage drop in the direction perpendicular to both magnetization and heat current. This anomalous Nernst effect (ANE) has been considered to be proportional to t he magnetization, and thus observed only in ferromagnets, while recent theories indicate that ANE provides a measure of the Berry curvature at the Fermi energy $E_{rm F}$. Here we report the observation of a large ANE at zero field in the chiral antiferromagnet Mn$_3$Sn. Despite a very small magnetization $sim 0.002$ $mu_{rm B}/$Mn, the transverse Seebeck coefficient at zero field is $sim 0.35~mu$V/K at room temperature and reaches $sim 0.6~mu$V/K at 200 K, comparable with the maximum value known for a ferromagnetic metal. Our first-principles calculation reveals that the large ANE comes from a significantly enhanced Berry curvature associated with the Weyl points nearby $E_{rm F}$. The ANE is geometrically convenient for the thermoelectric power generation, as it enables a lateral configuration of the modules to efficiently cover the heat source. Our observation of the large ANE in an antiferromagnet paves a way to develop a new class of thermoelectric material using topological magnets to fabricate an efficient, densely integrated thermopile.
133 - Ayaka Tsukahara 2013
Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AH E), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of self-induced ISHE in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumping-induced spin current in permalloy (Py) film generates a transverse electromotive force (EMF) in the film itself, which results from the coupling of spin current and SOI in Py. The control experiments ruled out spin rectification effect and anomalous Nernst effect as the origin of the EMF.
We study via density functional-based molecular dynamics the structural and dynamical properties of the rare earth silicon amorphous alloy Y_xSi_{1-x} for x=0.093 and x=0.156. The Si network forms cavities in which a Y^{3+} cation is entrapped. Its e lectrons are transferred to the Si network and are located in the dangling bonds of the Si atoms that line the Y cavities. This leads to the presence of low coordinated Si atoms that can be described as monovalent or divalent anions. For x=0.156, the cavities touch each other and share Si atoms that have two dangling bonds. The vibrational spectrum is similar to that of amorphous Si. However, doping induces a shoulder at 70 cm^{-1} and a pronounced peak at 180 cm^{-1} due to low coordinated Si.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا