اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDielectrophoretic Assembly of High-Density Arrays of Individual Graphene Devices for Rapid Screening
420
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We establish the use of dielectrophoresis for the directed parallel assembly of individual flakes and nanoribbons of few-layer graphene into electronic devices. This is a bottom-up approach where source and drain electrodes are prefabricated and the flakes are deposited from a solution using an alternating electric field applied between the electrodes. These devices are characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and electron transport measurements. They are shown to be electrically active and their current carrying capacity and subsequent failure mechanism is revealed. Akin to carbon nanotubes, we show that the dielectrophoretic deposition is self-limiting to one flake per device and is scalable to ultra-large-scale integration densities, thereby enabling the rapid screening of a large number of devices.
قيم البحث
اقرأ أيضاً
Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liqu
id-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfoliated TiS3 nanoribbons between two gold electrodes to produce photodetectors working in the visible. Through electrical and optical measurements we characterize the responsivity of the device and we find values as large as 3.8 mA/W, which improve of more than one order of magnitude on the state-of-the-art for devices based on liquid-phase-exfoliated two-dimensional materials assembled by drop-casting or ink-jet methods.
We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-sub
strate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development.
Depositing magnetic insulators on graphene has been a promising route to introduce magnetism via exchange proximity interaction in graphene for future spintronics applications. Molecule-based magnets may offer unique opportunities because of their sy
nthesis versatility. Here, we investigated the magnetic proximity effect of epitaxial iron phthalocyanine (FePc) molecules on high-quality monolayer and bilayer graphene devices on hexagonal boron nitride substrate by probing the local and non-local transport. Although the FePc molecules introduce large hole doping effects combined with mobility degradation, the magnetic proximity gives rise to a canted antiferromagnetic state under a magnetic field in the monolayer graphene. On bilayer graphene and FePc heterostructure devices, the non-local transport reveals a pronounced Zeeman spin-Hall effect. Further analysis of the scattering mechanism in the bilayer shows a dominated long-range scattering. Our findings in graphene/organic magnetic insulator heterostructure provide a new insight for the use of molecule-based magnets in two-dimensional spintronic devices.
Electromagnetic fields bound tightly to charge carriers in a two-dimensional sheet, namely surface plasmons, are shielded by metallic plates that are a part of a device. It is shown that for epitaxial graphenes, the propagation velocity of surface pl
asmons is suppressed significantly through a partial screening of the electron charge by the interface states. On the basis of analytical calculations of the electron lifetime determined by the screened Coulomb interaction, we show that the screening effect gives results in agreement with those of a recent experiment.
Resonant scatterers such as hydrogen adatoms can strongly enhance the low energy density of states in graphene. Here, we study the impact of these impurities on the electronic screening. We find a two-faced behavior: Kubo formula calculations reveal
an increased dielectric function $varepsilon$ upon creation of midgap states but no metallic divergence of the static $varepsilon$ at small momentum transfer $qto 0$. This bad metal behavior manifests also in the dynamic polarization function and can be directly measured by means of electron energy loss spectroscopy. A new length scale $l_c$ beyond which screening is suppressed emerges, which we identify with the Anderson localization length.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
