اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEffect of electron-electron scattering on spin dephasing in a high-mobility low-density twodimensional electron gas
97
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al0:35Ga0:65As heterostructure in dependence on temperature from 1.5 K to 30 K. It is found that the spin relaxation/dephasing time under a magnetic field of 0.5 T exhibits a maximum of 3.12 ns around 14 K, superimposed on an increasing background with rising temperature. The appearance of the maximum is ascribed to that at the temperature where the crossover from the degenerate to the nondegenerate regime takes place, electron-electron Coulomb scattering becomes strongest, and thus inhomogeneous precession broadening due to Dyakonov-Perel(DP) mechanism becomes weakest. These results agree with the recent theoretical predictions [Zhou et al., PRB 75, 045305 (2007)], verifying the importance of electron-electron Coulomb scattering to electron spin relaxation/dephasing.
قيم البحث
اقرأ أيضاً
Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of s
pin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane magnetic field and thus reduces the spin-flip rate. By time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin lifetime is increased by an order of magnitude as the initial spin polarization degree is raised from the low-polarization limit to several percent. We perform control experiments to decouple the excitation density in the sample from the spin polarization degree and investigate the interplay of the internal HF field and an external perpendicular magnetic field. The lifetime of spins oriented in the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and Dresselhaus spin-orbit fields are of the same order of magnitude. This anisotropy, which stems from the interference of the Rashba and the Dresselhaus spin-orbit fields, is highly density-dependent: as the electron density is increased, the kubic Dresselhaus term becomes dominant and reduces the anisotropy.
We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polari
zation, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the Dyakonov-Perel and the Bir-Aronov-Pikus mechanisms, with {em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.
We have studied experimentally and theoretically the influence of electron-electron collisions on the propagation of electron beams in a two-dimensional electron gas for excess injection energies ranging from zero up to the Fermi energy. We find that
the detector signal consists of quasiballistic electrons, which either have not undergone any electron-electron collisions or have only been scattered at small angles. Theoretically, the small-angle scattering exhibits distinct features that can be traced back to the reduced dimensionality of the electron system. A number of nonlinear effects, also related to the two-dimensional character of the system, are discussed. In the simplest situation, the heating of the electron gas by the high-energy part of the beam leads to a weakening of the signal of quasiballistic electrons and to the appearance of thermovoltage. This results in a nonmonotonic dependence of the detector signal on the intensity of the injected beam, as observed experimentally.
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe t
hat the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
Contrary to the common belief that electron-electron interaction (EEI) should be negligible in s-orbital-based conductors, we demonstrated that the EEI effect could play a significant role on electronic transport leading to the misinterpretation of t
he Hall data. We show that the EEI effect is primarily responsible for an increase in the Hall coefficient in the La-doped SrSnO3 films below 50 K accompanied by an increase in the sheet resistance. The quantitative analysis of the magnetoresistance (MR) data yielded a large phase coherence length of electrons exceeding 450 nm at 1.8 K and revealed the electron-electron interaction being accountable for breaking of electron phase coherency in La-doped SrSnO3 films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications of stannates in quantum coherent electronic devices owing to their large phase coherence length.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
