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The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K$ < T < 1.5$ K. At higher temperatures, 1.5 K$<T<4$ K, it is due to the interaction quantum correction. Finally, at $T>4-6$ K, the metallic-like behavior is determined by the phonon scattering.
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quant
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field metal-insulator transitio
We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence
The electron-electron interaction quantum correction to the conductivity of the gated double well Al$_x$Ga$_{1-x}$As/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity te
A five-level {Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic field paralle