ترغب بنشر مسار تعليمي؟ اضغط هنا

Unraveling electronic-structure features for metallic Na0.33CoO2 and charge-ordered Na0.5CoO2 by high-resolution electron energy-loss spectroscopy

356   0   0.0 ( 0 )
 نشر من قبل Ruijuan Xiao
 تاريخ النشر 2006
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Measurements by high-resolution electron energy-loss spectroscopy (HREELS) of NaxCoO2 reveal spectral features that differ remarkably between the metallic Na0.33CoO2 and the charge-ordered insulator Na0.5CoO2. Calculations by density functional theory plus Hubbard U (DFT+U) demonstrate that these differences arise essentially from the relatively greater strength of electron correlation in addition to the crystal-field effect in Na0.5CoO2. The effective U values are estimated to be ~3.0eV for x=0.5 and ~1.0eV for x=0.33, respectively. The electronic structures for these correlation strengths give good interpretations for the physical properties observed in the materials.



قيم البحث

اقرأ أيضاً

There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate larg ely from the electronic structure of the material, here the basic electronic structure of epitaxially-grown BaSnO3 films is studied using high-energy-resolution electron energy-loss spectroscopy in a transmission electron microscope and ab initio calculations. This study provides a detailed description of the dielectric function of BaSnO3, including the energies of bulk plasmon excitations and critical interband electronic transitions, the band structure and partial densities of states, the measured band gap, and more. To make the study representative of a variety of deposition methods, results from BaSnO3 films grown by both hybrid molecular beam epitaxy and high pressure oxygen sputter deposition are reported.
The localized-to-itinerant transition of f electrons lies at the heart of heavy-fermion physics, but has only been directly observed in single-layer Ce-based materials. Here, we report a comprehensive study on the electronic structure and nature of t he Ce 4f electrons in the heavy-fermion superconductor Ce2PdIn8, a typical n=2 CenMmIn3n+2m compound, using high-resolution and 4d-4f resonance photoemission spectroscopies. The electronic structure of this material has been studied over a wide temperature range, and hybridization between f and conduction electrons can be clearly observed to form a Kondo resonance near the Fermi level at low temperatures. The characteristic temperature of the localized-to-itinerant transition is around 120K, which is much higher than its coherence temperature Tcoh~30K.
We have performed soft x-ray and ultrahigh-resolution laser-excited photoemission measurements on tetragonal FeSe, which was recently identified as a superconductor. Energy dependent study of valence band is compared to band structure calculations an d yields a reasonable assignment of partial densities of states. However, the sharp peak near the Fermi level slightly deviates from the calculated energy position, giving rise to the necessity of self-energy correction. We have also performed ultrahigh-resolution laser photoemission experiment on FeSe and observed the suppression of intensity around the Fermi level upon cooling.
82 - Y. Ishii , S. Horio , Y. Noda 2020
Muon spin rotation and resonant soft X-ray scattering experiments on prototype multiferroics RMn2O5 (R = Y, Sm) are used to demonstrate that the local electric displacements are driven by the spin-current (SC) mechanism. Small local electric displace ments were evaluated by observing spin polarization at ligand O ions, for which implanted muons served as an extremely sensitive probe. Our results for YMn2O5 provide evidence that the spin polarization of O ions forming a spin cycloid chain with Mn spins increases in proportion to the vector spin chirality (Si x Sj ) of the Mn ions. This relationship strongly indicates that the charge transfer between O and Mn ions is driven by the SC mechanism, which leads to the ferroelectricity accompanying O spin polarization.
The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors with high spatial resolution. However, it still represents a challenge for narrow-bandgap semiconductors, since an electron beam with low energy spread is required. Here we demonstrate that by means of monochromated VEELS we can study the electronic band structure of narrow-gap materials GaSb and InAs in the form of heterostructured nanowires, with bandgap values down to 0.5 eV, especially important for newly developed structures with unknown bandgaps. Using complex heterostructured InAs-GaSb nanowires, we determine a bandgap value of 0.54 eV for wurtzite InAs. Moreover, we directly compare the bandgaps of wurtzite and zinc-blende polytypes of GaSb in a single nanostructure, measured here as 0.84 and 0.75 eV, respectively. This allows us to solve an existing controversy in the band alignment between these structures arising from theoretical predictions. The findings demonstrate the potential of monochromated VEELS to provide a better understanding of the band alignment at the heterointerfaces of narrow-bandgap complex nanostructured materials with high spatial resolution. This is especially important for semiconductor device applications where even the slightest variations of the electronic band structure at the nanoscale can play a crucial role in their functionality.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا