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We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$ contact when the electrons are extracted from the heavily doped $n^{+}-$semiconductor into the ferromagnet. We derived a general equation relating spin polarization of the current to that of the electron density in nonmagnetic semiconductors. We found that the effect of the complete spin polarization is achieved near $n^{+}$-$n$ interface when an effective diffusion coefficient goes to zero in this region while the diffusion current remains finite.
The creation of free excitons by absorption of circularly polarized photons, and their subsequent fast capture by donors, is at the origin of the spin polarization of donor-bound electrons. The sign of the electronic spin polarization at low density
The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is obse
Excitation of magnons or spin-waves driven by nominally unpolarized transport currents in point contacts of normal and ferromagnetic metals is probed by irradiating the contacts with microwaves. Two characteristic dynamic effects are observed: a rect
Time-resolved Kerr rotation experiments show that two kinds of spin modes exist in diluted magnetic semiconductors: (i) coupled electron-magnetic ion spin excitations and (ii) excitations of magnetic ion spin subsystem, which are decoupled from elect
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~text{ms}$, $0.4~text{ms}$ a