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Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this weak-localization magnetoresistance is strongly suppressed and, in some cases, completely absent. This unexpected observation is attributed to mesoscopic corrugations of graphene sheets which cause a dephasing effect similar to that of a random magnetic field.
In this theoretical study, we explore the manner in which the quantum correction due to weak localization is suppressed in weakly-disordered graphene, when it is subjected to the application of a non-zero voltage. Using a nonequilibrium Green functio
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditio
We present a magneto-transport study of graphene samples into which a mild disorder was introduced by exposure to ozone. Unlike the conductivity of pristine graphene, the conductivity of graphene samples exposed to ozone becomes very sensitive to tem
The quantum correction to electrical conductivity is studied on the basis of two-dimensional Wolff Hamiltonian, which is an effective model for a spin-orbit coupled (SOC) lattice system. It is shown that weak anti-localization (WAL) arises in SOC lat
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically wea