ترغب بنشر مسار تعليمي؟ اضغط هنا

Influence of Ru-doping on structure, defect chemistry, magnetic interaction and carrier motion of the La1-xNaxMnO3+delta manganite

74   0   0.0 ( 0 )
 نشر من قبل Lorenzo Malavasi
 تاريخ النشر 2005
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

In this work we report a structural, electrical and magnetic characterization of the La1-xNaxMn1-yRuyO3+d (LNMRO) system with x = 0.05, 0.15 and y = 0, 0.05, 0.15, also comprising an investigation of the role of the oxygen content on the related redox properties. The experimental investigation has been realized with the aid of X-ray powder diffraction, electron microprobe analysis, thermogravimetry, electrical resistivity and magnetization measurements, and electron paramagnetic resonance. We demonstrate that the effect of ruthenium doping on the studied LNMRO compounds is not only directly related to the Ru/Mn substitution and to the Ru oxidation state but also indirectly connected to the oxygen content in the sample. Our data show that ruthenium addition can improve electrical and magnetic properties of non-optimally (low) cation doped manganites, causing an increase of the TC value and the insurgence of MR effect, as observed for the x = 0.05 and y = 0.05 sample.



قيم البحث

اقرأ أيضاً

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.
Ab initio total energy calculations show that the antiferromagnetic (111) order is not the ground state for the ideal CuMnSb Heusler alloy in contrast to the results of neutron diffraction experiments. It is known, that Heusler alloys usually contain various defects depending on the sample preparation. We have therefore investigated magnetic phases of CuMnSb assuming the most common defects which exist in real experimental conditions. The full-potential supercell approach and a Heisenberg model approach using the coherent potential approximation are adopted. The results of the total energy supercell calculations indicate that defects that bring Mn atoms close together promote the antiferromagnetic (111) structure already for a low critical defect concentrations ($approx$ 3%). A detailed study of exchange interactions between Mn-moments further supports the above stabilization mechanism. Finally, the stability of the antiferromagnetic (111) order is enhanced by inclusion of electron correlations in narrow Mn-bands. The present refinement structure analysis of neutron scattering experiment supports theoretical conclusions.
91 - M. Ito , M. Uchida , Y. Kozuka 2016
We fabricate LaxSr2-x-yBayIrO4-delta thin films by pulsed laser deposition, in an effort to realize the effective carrier doping and metallization in the Sr2IrO4 system. We design ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate relation between the charge transport and the carrier density through systematic changes from original p-type spin-orbit Mott insulator to highly doped n-type metal.
The properties of single-crystal SrTiO$_{3}$ substrates and homoepitaxial SrTiO$_{3}$ films grown by pulsed laser deposition have been compared, in order to understand the loss of interfacial conductivity when more than a critical thickness of nomina lly homoepitaxial SrTiO$_{3}$ is inserted between a LaAlO$_{3}$ film and a SrTiO$_{3}$ substrate. In particular, the chemical composition and the structure of homoepitaxial SrTiO$_{3}$ investigated by low-energy ion-scattering and surface x-ray diffraction, show that for insulating heterointerfaces, a Sr-excess is present between the LaAlO$_{3}$ and homoepitaxial SrTiO$_{3}$. Furthermore, an increase in the out-of-plane lattice constant is observed in LaAlO$_{3}$, indicating that the conductivity both with and without insertion of SrTiO$_{3}$ thin film originates from a Zener breakdown associated with the polar catastrophe. When more than a critical thickness of homoepitaxial SrTiO$_{3}$ is inserted between LaAlO$_3$ and SrTiO$_3$, the electrons transferred by the electronic reconstruction are trapped by the formation of a Sr-rich secondary phase and Sr-vacancies. The migration of Sr towards the surface of homoepitaxial STO and accompanying loss of interfacial conductivity can be delayed by reducing the Sr-content in the PLD target.
We demonstrate that delta-doping can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-dop ed carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers show that they cause a local enhancement of ferromagnetic (F) double-exchange with respect to AF superexchange, resulting in local canting of the AF spins. This leads to a highly modulated magnetization, as measured by polarized neutron reflectometry. The spatial modulation of the canting is related to the spreading of charge from the doped layer, and establishes a fundamental length scale for charge transfer, transformation of orbital occupancy and magnetic order in these manganites. Furthermore, we confirm the existence of the canted, AF state as was predicted by de Gennes [P.-G. de Gennes, Phys. Rev. 118, 141 (1960)], but had remained elusive.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا