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The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa) on the electronic, magnetic and structural properties of EuNiO$_{3}$ using electrical resistance measurements, ${151}^$Eu nuclear resonance scattering of synchrotron radiation and x-ray diffraction, respectively. With increasing pressure we find at p$_{c}$ =5.8 GPa a transition from the insulating state to a metallic state, while the orthorhombic structure remains unchanged up to 20 GPa. The results are explained in terms of a gradual increase of the electronic bandwidth with increasing pressure, which results in a closing of the charge transfer gap. It is further shown that the pressure-induced metallic state exhibits magnetic order with a lowervalue of T$_{N}$ (T$_{N}$ ~120 K at 9.4 GPa) which disappears between 9.4 and 14.4 GPa.
On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal-insulator transition takes place at high pressure (approximately 6 GPa) in MgV_2O_4.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This
We compute the electronic structure, spin and charge state of Fe ions, and structural phase stability of paramagnetic CaFeO$_3$ under pressure using a fully self-consistent in charge density DFT+dynamical mean-field theory method. We show that at amb
Recent experiments [arXiv: 1808.07865] on twisted bilayer graphene (TBLG) show that under hydrostatic pressure, an insulating state at quarter-filling of the moire superlattice (i.e., one charge per supercell) emerges, in sharp contrast with the prev
An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based tw