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We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall coefficient, $R_H$, is found to be enhanced when $T$ decreases. Strong magnetic fields further enhance the slope of $rho_{xy}(B)$ at all temperatures studied. Coulomb interaction corrections of a Fermi liquid(FL) in the ballistic regime can not explain the enhancement of $rho_{xy}$ which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, {it not enhance} the slope of $rho_{xy}(B)$ as $T$ decreases and/or $B$ increases.
A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]
We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the h
Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum corrections to the
The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solidscite{wilk:67}, where quantum effects often lea
We study the bilayer quantum Hall system at total filling factor u_T = 1 within a bosonization formalism which allows us to approximately treat the magnetic exciton as a boson. We show that in the region where the distance between the two layers is