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تسجيل مستخدم جديدImproved Hc2 in Bulk-Form Magnesium Diboride by Mechanical Alloying With Carbon
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High energy milling of MgB2 pre-reacted powder renders the material largely amorphous through extreme mechanical deformation and is suitable for mechanically alloying MgB2 with dopants including carbon. Bulk samples of milled C and MgB2 powders subjected to hot isostatic pressing and Mg vapor annealing have achieved critical fields in excess of 32T and critical current density approaching 10^6 A/cm^2.
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We report on the microwave (mw) properties of coaxial cavities built by using bulk MgB2 superconductor prepared by reactive liquid Mg infiltration technology. We have assembled a homogeneous cavity, by using an outer MgB2 cylinder and an inner MgB2 r
od, and a hybrid cavity by using an outer copper cylinder and the same MgB2 rod as inner conductor. By the analysis of the resonance curves, in the different resonant modes, we have determined the microwave surface resistance, Rs, of the MgB2 materials as a function of the temperature and the frequency, in the absence of DC magnetic fields. At T = 4.2 K and f = 2.5 GHz, by a mw pulsed technique, we have determined the quality factor of the homogeneous cavity as a function of the input power up to a maximum level of about 40 dBm (corresponding to a maximum peak magnetic field of about 100 Oe). Contrary to what occurs in many films, Rs of the MgB2 material used does not exhibit visible variations up to an input power level of about 10 dBm and varies less than a factor of 2 on further increasing the input power of 30 dB.
Thin superconducting films of magnesium diboride (MgB2) with Tc approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ annealing para
meters shows an optimum temperature of about 600C in a background of 0.7 atm. of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex-situ approaches (e.g. reacting boron films with magnesium vapor at 900C), these films are processed below the decomposition temperature of MgB2. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in-situ growth of MgB2 at elevated temperature are discussed.
We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction characteristic
with critical current-resistance product nearly independent of the junction area. The dependence of the critical current with temperature up to 20 K agrees with the [Ambegaokar and Baratoff, Phys. Rev. Lett. 10, 486 (1963)] expression. For the junctions with native-oxide, conductance at low bias exhibits subgap features while at high bias reveals thick barriers. As a result no supercurrent was observed in the latter, despite the presence of superconducting-gaps to over 30 K.
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d and heat treated samples were observed as a result of increased contact with air. These and other data were consistent with alloying with carbon as a result of exposure to air. A less clear trend of decreased connectivity associated with air exposure was also observed. In making the case that exposure to air should be considered a doping process, these results may explain the wide varibability of undoped MgB2 properties extant in the literature.
We report the fabrication of a directly coupled superconducting quantum interference device (SQUID) magnetometer in MgB2 using a focused ion beam (FIB) to create Josephson junctions in a 70 nm thick film of MgB2. The SQUID shows a voltage modulation
(deltaV) of 175 mV at a temperature of 10 K and operates over a temperature range from 10 K to 24 K. We find excellent agreement between the measured maximum transfer functions and those predicted by theory. We have measured the magnetic flux noise at 20 K to be as low as 14 micro Phi-0 per root Hz.
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