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A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases with bias, but drops faster and even inverts with voltage when electrons tunnel into it. A bias-dependent free electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced. The change in sign is ascribed to the detailed matching of the electron wave function through the tunnel barrier.
We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, w
We demonstrate that the selective equal spin Andreev reflection (SESAR) spectroscopy can be used in STM experiments to distinguish the zero-energy Majorana quasiparticles from the ordinary fermionic states of the Rashba chain. Such technique, designe
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron n
We calculate current, spin current and tunnel magnetoresistance (TMR) for a quantum dot coupled to ferromagnetic leads in the presence of a square wave of bias voltage. Our results are obtained via time-dependent nonequilibrium Green function. Both p
The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with