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We have performed a series of measurements on the low temperature behavior of a magnetic nano-particle system. Our results show striking memory effects in the dc magnetization. Dipolar interactions among the nano-particles {em suppress} the memory effect. We explain this phenomenon by the superposition of different super paramagnetic relaxation times of single domain magnetic nano- particles. Moreover, we observe a crossover in the temperature dependence of coercivity. We show that a dilute dispersion of particles with a flat size distribution yields the best memory.
In this Comment we report a phenomenon identical to that observed in ({Y. Sun, M. B. Salamon, K. Garnier and R. S. Averback, Phys. Rev. Lett. 91, 167206 (2003)}) for systems of NiFe{$_2$}O{$_4$} particles (mean size $approx$ 3nm) embedded in a SiO{$_
We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been e
The exploration of exchange bias (EB) on the nanoscale provides a novel approach to improving the anisotropic properties of magnetic nanoparticles for prospective applications in nanospintronics and nanomedicine. However, the physical origin of EB is
The nano-particle systems under theoretically and experimentally investigation because of the potential applications in the nano-technology such as drug delivery, ferrofluids mechanics, magnetic data storage, sensors, magnetic resonance imaging, and