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We model magnetization processes that take place through tunneling in crystals of single-molecule magnets, such as Mn_12 and Fe_8. These processes take place when a field H is applied after quenching to very low temperatures. Magnetic dipolar interactions and spin flipping rules are essential ingredients of the model. The results obtained follow from Monte Carlo simulations and from the stochastic model we propose for dipole field diffusion. Correlations established before quenching are shown to later drive the magnetization process. We also show that in simple cubic lattices, m propto sqrt(t) at time t after H is applied, as observed in Fe_8, but only for 1+2log_10(h_d/h_w) time decades, where h_d is some near-neighbor magnetic dipolar field and a spin reversal can occur only if the magnetic field acting on it is within some field window (-h_w,h_w). However, the sqrt(t) behavior is not universal. For BCC and FCC lattices, m propto t^p, but p simeq 0.7 . An expression for p in terms of lattice parameters is derived. At later times the magnetization levels off to a constant value. All these processes take place at approximately constant magnetic energy if the annealing energy epsilon_a is larger than the tunneling windows energy width (i.e., if epsilon_a gtrsim gmu_B h_w S). Thermal processes come in only later on to drive further magnetization growth.
We show that correlations established before quenching to very low temperatures, later drive the magnetization process of systems of single molecule magnets, after a magnetic field is applied at t=0. We also show that in SC lattices, m propto sqrt(t)
Comment on the paper: Magnetization Process of Single Molecule Magnets at Low Temperatures of J.F.Fernandez and J.J.Alonso (PRL 91, 047202 (2003)).
This is the reply to a Comment by I.S.Tupitsyn and P.C.E. Stamp (PRL v92,119701 (2004)) on a letter of ours (J.F.Fernandez and J.J.Alonso, PRL v91, 047202 (2003)).
We study the relaxation of interacting single--molecule magnets (SMMs) in both spatially ordered and disordered systems. The tunneling window is assumed to be, as in Fe8, much narrower than the dipolar field spread. We show that relaxation in disorde
Configuration transitions of individual molecules and atoms on surfaces are traditionally described with energy barriers and attempt rates using an Arrhenius law. This approach yields consistent energy barrier values, but also attempt rates orders of