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We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode (LED) spin detectors for spintronics applications.
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc blende semicond
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% mathcal{N}$ electrons, with $mathcal{N}$ up to four. We show that the Kondo resonance appears in the $mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in the $mathcal{N}
Charged impurities in semiconductor quantum dots comprise one of the main obstacles to achieving scalable fabrication and manipulation of singlet-triplet spin qubits. We theoretically show that using dots that contain several electrons each can help
We demonstrate a novel method for deterministic charging of InAs quantum dots embedded in photonic crystal nanoresonators using a unique vertical p-n-i-n junction within the photonic crystal membrane. Charging is confirmed by the observation of Zeema
Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs quantum do