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تسجيل مستخدم جديدInteraction of an electron gas with photoexcited electron-hole pairs in modulation-doped GaAs and CdTe quantum wells
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The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blue-shifted from the corresponding transition of the isolated charged magnetoexciton X-. The observed blue-shift of X- is larger than that of two-electron negative donor D-, in agreement with theoretical predictions.
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The dependences of the transport scattering time {tau}t, quantum lifetime {tau}q, and their ratio {tau}t/{tau}q on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are
investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in {tau}t and {tau}q with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in {tau}t/{tau}q observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in {tau}t more considerably than an increase in {tau}q.
Optically detected cyclotron resonance of two-dimensional electrons has been studied in nominally undoped CdTe/(Cd,Mn)Te quantum wells. The enhancement of carrier quantum confinement results in an increase of the electron cyclotron mass from 0.099$m_
0 $ to 0.112$m_0 $ with well width decreasing from 30 down to 3.6 nm. Model calculations of the electron effective mass have been performed for this material system and good agreement with experimental data is achieved for an electron-phonon coupling constant $alpha $=0.32.
We study the evolution of the absorption spectrum of a modulation doped GaAs/AlGaAs semiconductor quantum well with decreasing the carrier density. We find that there is a critical density which marks the transition from a Fermi edge singularity to a
hydrogen-like behavior. At this density both the lineshape and the transitions energies of the excitons change. We study the density dependence of the singularity exponent $alpha $ and show that disorder plays an important role in determining the energy scale over which it grows.
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed
reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental data are
in good agreement with theoretical predictions. The model accurately accounts for the large electron energies above the GaAs conduction band bottom, resulting from the strong quantum confinement. In the tracked range of optical transition energies E from 1.52 to 2.0eV, the electron g-factor along the growth axis follows closely the universal dependence g_||(E)= -0.445 + 3.38(E-1.519)-2.21(E-1.519)^2 (with E measured in eV); and this universality also embraces Al_xGa_{1-x}As alloys. The in-plane g-factor component deviates notably from the universal curve, with the degree of deviation controlled by the structural anisotropy.
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