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تسجيل مستخدم جديدOrder-disorder transition driven by dynamical effects between the Sn/Ge(111)-($3times3$) and $(sqrt{3}timessqrt{3})R30^{circ}$ phases
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We have investigated the atomic and electronic structure of the ($sqrt{3}times sqrt{3}$)$R30^{circ}$ SnAu$_2$/Au(111) surface alloy. Low energy electron diffraction and scanning tunneling microscopy measurements show that the native herringbone recon
struction of bare Au(111) surface remains intact after formation of a long range ordered ($sqrt{3}times sqrt{3}$)$R30^{circ}$ SnAu$_2$2/Au(111) surface alloy. Angle-resolved photoemission and two-photon photoemission spectroscopy techniques reveal Rashba-type spin-split bands in the occupied valence band with comparable momentum space splitting as observed for the Au(111) surface state, but with a hole-like parabolic dispersion. Our experimental findings are compared with density functional theory (DFT) calculation that fully support our experimental findings. Taking advantage of the good agreement between our DFT calculations and the experimental results, we are able to extract that the occupied Sn-Au hybrid band is of (s, d)-orbital character while the unoccupied Sn-Au hybrid bands are of (p, d)-orbital character. Hence, we can conclude that the Rashba-type spin splitting of the hole-like Sn-Au hybrid surface state is caused by the significant mixing of Au d- to Sn s-states in conjunction with the strong atomic spin-orbit coupling of Au, i.e., of the substrate.
Growing attention has been drawn in the past years to the alpha-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (sqrt3 x sqrt3)R30° one. On the basis of scanning
tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry. Recent He diffraction studies of the (3x3) long range order have shown the transition to be of the order-disorder type with a critical temperature Tc=220 K and belonging to the 3-state Potts universality class. These findings clearly exclude an SCDW driven mechanism at 220 K, but they cannot exclude the occurence of a displacive transition at higher temperature. Here we present photoelectron diffraction data taken at 300 K and photoemission data taken up to 500 K (which is the maximum temperature where the (sqrt3 x sqrt3)R30° is stable) . From our analysis it is shown that the atomic structure of the Sn overlayer does not change throughout the transition up to 500 K. As a consequence the displacive hypothesis must be discarded in favour of a genuine order-disorder model.
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(sqrt{3}times!sqrt{3})text{R}30^
{circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.
Mixed spin chain compounds, ACuFe2(VO4)3 (A= Li,Na), reach magnetically ordered state at TN ~ 11 K (Li) or ~ 9 K (Na) and experience further transformation of magnetic order at T* ~ 7 K (Li) or ~ 5 K (Na), evidenced in magnetic susceptibility chi and
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sensitive magnetic microprobe such as $mu$SR does not detect magnetism, all other samples display weak ferromagnetism with a magnetic moment of up to 0.22 $mu_B$ per Fe atom. As a function of doping and of temperature a crossover from short range to long range magnetic order is observed, characterized by a broadly distributed spontaneous internal field. However, the $y=0.14$ and $y=0.17$ remain in the short range ordered state down to the lowest investigated temperature. The transition from short range to long range order appears to be accompanied by a change of the character of the spin fluctuations, which exhibit spin wave excitations signature in the LRO part of the phase diagram. Mossbauer spectroscopy for $y=0.27$ and 0.32 indicates that the internal field lies in the plane perpendicular to the crystallographic $c$ axis. The field distribution and its evolution with doping suggest that the details of the Fe magnetic moment formation and the consequent magnetic state are determined not only by the dopant concentration but also by the way the replacement of the Ga atoms surrounding the Fe is accomplished.
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