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A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet-triplet qubit or two single-spin qubits coupled by exchange interaction. In this article, we report progress on spin dephasing of two exchange-coupled spins in a double quantum dot. We first discuss the schemes of two-qubit gates and qubit encodings in gate-defined quantum dots or donor atoms based on the exchange interaction. Then, we report the progress on spin dephasing of a singlet-triplet qubit or a two-qubit gate. The methods of suppressing spin dephasing are further discussed. The understanding of spin dephasing may provide insights into the realization of high-fidelity quantum gates for spin-based quantum computing.
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative analytical approac
Environmental noise usually hinders the efficiency of charge transport through coherent quantum systems; an exception is dephasing-assisted transport (DAT). We show that linear triple quantum dots in a transport configuration and subjected to pure de
We present a scheme for correcting for crosstalk- and noise-induced errors in exchange-coupled singlet-triplet semiconductor double quantum dot qubits. While exchange coupling allows the coupling strength to be controlled independently of the intraqu
We obtain a microscopic description of the interaction between electron spins in bulk semiconductors and in pairs of semiconductor quantum dots. Treating the k.p band mixing and the Coulomb interaction on the same footing, we obtain in the third orde
The Heisenberg exchange interaction between neighboring quantum dots allows precise voltage control over spin dynamics, due to the ability to precisely control the overlap of orbital wavefunctions by gate electrodes. This allows the study of fundamen