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Transition metal oxides have long been an area of interest for water electrocatalysis through the oxygen evolution and oxygen reduction reactions. Iron oxides, such as LaFeO$_{3}$, are particularly promising due to the favorable energy alignment of the valence and conduction bands comprised of Fe$^{3+}$ cations and the visible light band gap of such materials. In this work, we examine the role of band alignment on the electrocatalytic oxygen evolution reaction (OER) in the intrinsic semiconductor LaFeO$_{3}$ by growing epitaxial films of varying thicknesses on Nb-doped SrTiO$_{3}$. Using cyclic voltammetry and electrochemical impedance spectroscopy, we find that there is a strong thickness dependence on the efficiency of electrocatalysis for OER. These measurements are understood based on interfacial band alignment in the system as confirmed by layer-resolved electron energy loss spectroscopy and electrochemical Mott-Schottky measurements. Our results demonstrate the importance of band engineering for the rational design of thin film electrocatalysts for renewable energy sources.
This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from the one of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is c
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic response
We present the temperature- and thickness-dependent structural and morphological evolution of strain induced transformations in highly-strained epitaxial BiFeO3 films deposited on LaAlO3 (001) substrates. Using high-resolution X-ray diffraction and t
In the perovskite oxide SrCrO$_{3}$ the interplay between crystal structure, strain and orbital ordering enables a transition from a metallic to an insulating electronic structure under certain conditions. We identified a narrow window of oxygen part
Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growt