ترغب بنشر مسار تعليمي؟ اضغط هنا

Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime

96   0   0.0 ( 0 )
 نشر من قبل Yan-Ting Liu
 تاريخ النشر 2021
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}sim$ $0.36%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are identified: A spin-dependent-scattering mechanism regime at small current densities $J sim$ $10$$^{9}$A/m$^{2}$ (UMR ratio $propto$ $J$), a spin-magnon-interaction mechanism regime at intermediate $J sim$ $10$$^{10}$A/m$^{2}$ (UMR ratio $propto$ $J$$^{3}$), and a spin-transfer torque (STT) regime at $J sim$ $10$$^{11}$A/m$^{2}$ (UMR ratio independent of $J$). We verify the direct correlation between this large UMR and the transfer of spin angular momentum from the W layer to the CoFeB layer by both field-dependent and current-dependent UMR characterizations. Numerical simulations further confirm that the large STT-UMR stems from the tilting of the magnetization affected by the spin Hall effect-induced spin-transfer torques. An alternative approach to estimate damping-like spin-torque efficiencies from magnetic heterostructures is also proposed.



قيم البحث

اقرأ أيضاً

Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb.
87 - Yang Lv , James Kally , Tao Liu 2018
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque s witching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically stu dy here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and anti-parallel states of the junction. In addition, we show that the non-collinear order results in a spin-transfer torque that is in several key aspects different from the spin-transfer torque in ferromagnetic junctions.
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with special chara cteristics is becoming more and more prevalent. We now present a full quantum investigation of the magnetoresistance and the spin transfer torque in a domain wall, which is embedded in a nano-contact of Ni$_{80}$Fe$_ {20}$, where the size of the domain wall becomes a relevant tunable parameter. The dependence on the domain wall width as well as the spatial dependence of the torque along the domain wall can be analyzed in complete detail. The magnetoresistance drops with increasing domain wall width as expected, but also shows characteristic modulations and points of resonant spin-flip transmission. The spin transfer torque has both significant in-plane and out-of-plane contributions even without considering relaxation. A closer inspection identifies contributions from the misalignment of the spin density for short domain walls as well as an effective gauge field for longer domain walls, both of which oscillate along the domain wall.
We predict a unidirectional magnetoresistance effect arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric field is rev ersed or the magnetization of the ferromagnetic layer is rotated. In the presence of spin-orbit coupling, an electron wave incident on the interface of the bilayer undergoes a spin rotation and a momentum-dependent phase shift. Quantum interference between the incident and reflected waves furnishes the electron with an additional velocity that is even in the in-plane component of the electrons wavevector, giving rise to the unidirectional magnetoresistance - a nonlinear magnetotransport effect that is rooted in the wave nature of electrons.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا