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تسجيل مستخدم جديدMagnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems
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The angular-dependent magnetoresistance (AMR) of the ab plane is measured on the single crystals of FeSe1-xSx (x = 0, 0.07, 0.13 and 1) and FeSe1-yTey (y = 0.06, 0.61 and 1) at various temperatures under fields up to 9 T. A pronounced twofold-anisotropic carrier-scattering effect is identified by AMR, and attributed to a magnetic-field-induced spin nematicity that emerges from the tetragonal normal-state regime below a characteristic temperature Tsn. This magnetically polarized spin nematicity is found to be ubiquitous in the isoelectronic FeSe1-xSx and FeSe1-yTey systems, no matter whether the sample shows an electronic nematic order at Ts < Tsn, or an antiferromagnetic order at TN < Tsn, or neither order. Importantly, we find that the isoelectronic substitution with sulfur does not suppress but even enhances the characteristic Tsn of the induced spin nematicity in FeSe1-xSx samples. This contrasts sharply with their rapidly suppressed Ts, the transition temperature of the spontaneous electronic nematicity. Furthermore, we find that the superconductivity is significantly suppressed with the enhancement of the induced spin nematicity in both FeSe1-xSx and FeSe1-yTey samples.
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Here we establish a combined electronic phase diagram of isoelectronic FeSe1-xSx (0.19 > x > 0.0) and FeSe1-yTey (0.04 < y < 1.0) single crystals. The FeSe1-yTey crystals with y = 0.04 - 0.30 are grown by a hydrothermal ion-deintercalation (HID) meth
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