اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدLasing in 15 atm CO2 cell optically pumped by a Fe:ZnSe laser
101
0
0.0
(
0
)
تأليف
Dana Tovey
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
10 {mu}m lasing is studied in a compact CO2-He cell pressurized up to 15 atm when optically pumped by a ~50 mJ Fe:ZnSe laser tunable around 4.3 {mu}m. The optimal pump wavelength and partial pressure of CO2 for generating 10 {mu}m pulses are found to be ~4.4 {mu}m and 0.75 atm, respectively. Without cavity optimization, the optical-to-optical conversion efficiency reached ~10% at a total pressure of 7 atm. The gain lifetime is measured to be ~1 {mu}s at pressures above 10 atm, indicating the feasibility of using high-pressure optically pumped CO2 for the efficient amplification of picosecond 10 {mu}m pulses.
قيم البحث
اقرأ أيضاً
We report the compact and robust coherent source operating in mid-IR based on Fe:ZnSe chalcogenide gain medium optically pumped by Er:ZBLAN fiber laser. The output power of 2.1 W with 59% slope efficiency with respect to absorbed pump power at liquid
nitrogen cooling is achieved. We show that strong re-absorption at high pump power and iron ion doping concentrations leads to the continuous tuning of central wavelength from 4012 to 4198 nm. Robustness of high power Er:ZBLAN fiber laser combined with prominent spectroscopic properties of Fe:ZnSe media pave the way for the development of reliable tunable CW mid-IR sources for scientific and industrial purposes.
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um
wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
A multiple-graphene-layer (MGL) structure with a stack of GLs and a highly conducting bottom GL on SiC substrate pumped by optical radiation is considered as an active region of terahertz (THz) and far infrared (FIR) lasers with external metal mirror
s. The dynamic conductivity of the MGL structure is calculated as a function of the signal frequency, the number of GLs, and the optical pumping intensity. The utilization of optically pumped MGL structures might provide the achievement of lasing with the frequencies of about 1 THz at room temperature due to a high efficiency.
The surprising recent observation of highly emissive triplet-states in lead halide perovskites accounts for their orders-of-magnitude brighter optical signals and high quantum efficiencies compared to other semiconductors. This makes them attractive
for future optoelectronic applications, especially in bright low-threshold nano-lasers. Whilst non-resonantly pumped lasing from all-inorganic lead-halide perovskites is now well-established as an attractive pathway to scalable low-power laser sources for nano-optoelectronics, here we showcase a resonant optical pumping scheme on a fast triplet-state in CsPbBr3 nanocrystals. The scheme allows us to realize a polarized triplet-laser source that dramatically enhances the coherent signal by one order of magnitude whilst suppressing non-coherent contributions. The result is a source with highly attractive technological characteristics including a bright and polarized signal, and a high stimulated-to-spontaneous emission signal contrast that can be filtered to enhance spectral purity. The emission is generated by pumping selectively on a weakly-confined excitonic state with a Bohr radius ~10 nm in the nanocrystals. The exciton fine-structure is revealed by the energy-splitting resulting from confinement in nanocrystals with tetragonal symmetry. We use a linear polarizer to resolve two-fold non-degenerate sub-levels in the triplet exciton and use photoluminescence excitation spectroscopy to determine the energy of the state before pumping it resonantly.
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally th
e strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
