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Angle-resolved photoemission spectroscopy (ARPES), an experimental technique based on the photoelectric effect, is arguably the most powerful method for probing the electronic structure of solids. The past decade has witnessed notable progress in ARPES, including the rapid development of soft-X-ray ARPES, time-resolved ARPES, spin-resolved ARPES and spatially resolved ARPES, as well as considerable improvements in energy and momentum resolution. Consequently , ARPES has emerged as an indispensable experimental probe in the study of topological materials, which have characteristic non-trivial bulk and surface electronic structures that can be directly detected by ARPES. Over the past few years, ARPES has had a crucial role in several landmark discoveries in topological materials, including the identification of topological insulators and topological Dirac and Weyl semimetals. In this Technical Review , we assess the latest developments in different ARPES techniques and illustrate the capabilities of these techniques with applications in the study of topological materials.
We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk
We have carried out detailed high resolution ARPES measurements and band structure calculations to study the electronic structure of CaMnSb$_{2}$. The observed Fermi surface mainly consists of one hole pocket around ${Gamma}$ point and one tiny hole
Topological insulators are a new phase of matter that exhibits exotic surface electronic properties. Determining the spin texture of this class of material is of paramount importance for both fundamental understanding of its topological order and fut
Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane di
The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the ba